Abstract ZnS:Cu thin films were prepared by vulcanizing the sputtered Zn:Cu thin films at 500°С in sulfur vapor. The crystal structure, surface morphology, optical properties and microscopic defects of the films were characterized by XRD, SEM, UV–visible spectrophotometer, Raman spectroscopy and slow positron beam Doppler broadening spectroscopy, respectively. The XRD results showed that the ZnS:Cu thin films without any detectable impurities were a cubic structure, further confirmed by Raman spectra. The grain size of ZnS:Cu films was observed to increase from ~150 nm to ~300 nm with film thickness. Besides, apparent changes in the compactness and stoichiometry of the ZnS:Cu films were found with increasing the film thickness. These ZnS:Cu films exhibited a low transmittance in the visible range, with the band-gap energies of 3.52–3.62eV. Also, the effect of film thickness on microscopic defects of ZnS:Cu films were discussed in detail.

中文翻译：

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膜厚对硫化制备的ZnS:Cu薄膜结构和光学性能的影响

摘要 ZnS:Cu 薄膜是通过将溅射的 Zn:Cu 薄膜在 500°С 的硫蒸气中硫化制备的。分别通过XRD、SEM、紫外-可见分光光度计、拉曼光谱和慢正电子束多普勒展宽光谱对薄膜的晶体结构、表面形貌、光学性能和微观缺陷进行了表征。XRD 结果表明，没有任何可检测杂质的 ZnS:Cu 薄膜是立方结构，拉曼光谱进一步证实了这一点。观察到 ZnS:Cu 薄膜的晶粒尺寸随着薄膜厚度从 ~150 nm 增加到 ~300 nm。此外，随着薄膜厚度的增加，发现 ZnS:Cu 薄膜的致密性和化学计量发生明显变化。这些 ZnS:Cu 薄膜在可见光范围内表现出低透射率，带隙能量为 3.52-3.62eV。还，