ZnO thin-film transistors (TFTs) with scaled channel lengths of 10 $\mu$m, 5 $\mu$m, 4 $\mu$m, and 2 $\mu$m exhibit increasing intrinsic channel electron mobility at a gate bias of 10 V (15 V) from 0.782 cm${}^2$/Vs (0.83 cm${}^2$/Vs) in the 10 $\mu$m channel length TFT to 8.9 cm${}^2$/Vs (19.04 cm${}^2$/Vs) for the channel length scaled down to 2 $\mu$m. Current-voltage measurements indicate an n-type channel enhancement mode transistor operation, with threshold voltages in the range of $8.4$ V to $5.3$ V, maximum drain currents of 41 $\mu$A/$\mu$m, 96 $\mu$A/$\mu$m, 193 $\mu$A/$\mu$m, and 214 $\mu$A/$\mu$m at a gate bias of 10 V, and breakdown voltages of 80 V, 70 V, 62 V, and 59 V with respect to channel lengths of 10 $\mu$m, 5 $\mu$m, 4 $\mu$m, and 2 $\mu$m. The channel electron mobility (excluding contact resistance) is extracted by the transmission line method (TLM) from the effective electron mobility (including contact resistance). The contact sheet resistance of $4.6\times {10}^5\mathrm{\Omega }$/sq extracted from the measurements, which is$3.5\times$ larger than the contact sheet resistance of $1.3\times {10}^5\mathrm{\Omega }$/sq obtained from the DFT calculation and the 1D self-consistent Poisson-Shrödinger simulation, largely limits the drive current in the scaled ZnO TFTs.

沟道长度为10的ZnO薄膜晶体管（TFT） $\mu$米5 $\mu$米4 $\mu$m和2 $\mu$m在0.782 cm的栅极偏压为10 V（15 V）时展现出越来越大的本征沟道电子迁移率${}^2$/ Vs（0.83厘米${}^2$/ Vs）中的10 $\mu$m沟道长度TFT至8.9厘米${}^2$/ Vs（19.04厘米${}^2$/ Vs）缩小到2 $\mu$米 电流电压测量表明n型沟道增强模式晶体管工作，阈值电压范围为$8.4$ V到 $5.3$ V，最大漏极电流为41 $\mu$一种/$\mu$m，96 $\mu$一种/$\mu$m，193 $\mu$一种/$\mu$m和214 $\mu$一种/$\mu$相对于10的沟道长度，在10 V的栅极偏置下的m以及80 V，70 V，62 V和59 V的击穿电压 $\mu$米5 $\mu$米4 $\mu$m和2 $\mu$米 通过传输线方法（TLM）从有效电子迁移率（包括接触电阻）中提取沟道电子迁移率（不包括接触电阻）。接触片电阻$4.6\times {10}^5\mathrm{\Omega }$/ sq从测量中提取，即$3.5\times$ 大于接触片电阻 $1.3\times {10}^5\mathrm{\Omega }$通过DFT计算和一维自洽Poisson-Shrödinger模拟获得的/ sq极大地限制了按比例缩放ZnO TFT的驱动电流。