The memristor-aided logic (MAGIC), which is only composed of memristors, can realize the in-memory computing and then break the wall between storage and computation. However, the inherent stochastic switching behavior is exhibited in the memristor including temporal variations and spatial variations. Write operation might fail due to the variation of threshold voltage. When such unsafe writing phenomenon is performed, the reliability problem could make the delicate logical design break down. In this paper, we analyzed the implication of unsafe writing on the MAGIC gate with the VTEAM model systematically. The mathematical relationship between MAGIC gate reliability and switching probability has been deduced combined with the Markov chain model of unsafe writing, which is in accordance with simulation results. It demonstrates that with the appropriate device property and the appropriate operation time, unsafe writing may make the possible MAGIC NOR gate converge to always NOR logic. Furthermore, the best operation time for unsafe writing is proposed to improve the probability of right logic gate and avoid the undesired logic result, when the device cannot meet the requirement.

仅由忆阻器组成的忆阻器辅助逻辑（MAGIC）可以实现内存中计算，然后打破存储和计算之间的障碍。但是，忆阻器表现出固有的随机切换行为，包括时间变化和空间变化。由于阈值电压的变化，写操作可能会失败。当执行这种不安全的写入现象时，可靠性问题可能会使精细的逻辑设计崩溃。在本文中，我们使用VTEAM模型系统地分析了MAGIC门上不安全写入的含义。结合仿真结果，推导了不安全写入的马尔可夫链模型，推论了MAGIC门的可靠性与切换概率之间的数学关系。它表明，通过适当的设备属性和适当的操作时间，不安全的写入操作可能会使MAGIC NOR门可能会收敛到始终为NOR逻辑。此外，提出了不安全写入的最佳操作时间，以提高当设备不能满足要求时正确逻辑门的可能性，并避免出现不希望的逻辑结果。