All-inorganic zero-dimensional (0D) tetrahedrite (Cu₁₂Sb₄S₁₃, CAS) quantum dots (QDs) have attracted extensive attention due to their excellent optical properties, bandgap tunability, and carrier mobility. In this paper, various sized CAS QDs (5.1, 6.7, and 7.9 nm) are applied as a switching layer with the structure F:SnO₂ (FTO)/CAS QDs/Au, and in doing so, the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported. The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time. Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs. Moreover, the presented memory devices have reliable bipolar resistive-switching properties, a resistance (ON/OFF) ratio larger than 10⁴, high reproducibility, and good data retention ability. After 1.4 ×10⁶ s of stability testing and 10⁴ cycles of quick read tests, the change rate of the ON/OFF ratio is smaller than 0.1%. Furthermore, resistive-witching stability can be improved by ensuring a uniform particle size for the CAS QDs. The theoretical calculations suggest that the space-charge-limited currents (SCLCs), which are functioned by Cu 3d, Cu 3p and S 3p to act as electron self-trapping centers due to their quantum confinement and form conduction pathways under an electric field, are responsible for the resistive-switching effect. This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.

全无机零维（0D）四面体（Cu ₁₂ Sb ₄ S ₁₃，CAS）量子点（QDs）由于其出色的光学性能，带隙可调性和载流子迁移率而受到广泛关注。在本文中，将各种尺寸的CAS QD（5.1、6.7和7.9 nm）用作结构为F：SnO ₂的开关层（FTO）/ CAS QDs / Au，并据此报告了基于CAS QD的电子产品的非易失性电阻开关行为。首次针对基于CAS QD的存储设备观察到具有大小相关性的SET / RESET电压可调性。结果表明，不同大小的CAS QD会导致不同的能带结构，并且由于CAS QD的大小均一，因此可以简单有效地调节SET / RESET电压。而且，提出的存储器件具有可靠的双极电阻切换特性，大于10 ⁴的电阻（ON / OFF）比，高再现性和良好的数据保持能力。经过1.4×10 ⁶ s的稳定性测试和10 ⁴在快速读取测试周期中，ON / OFF比率的变化率小于0.1％。此外，通过确保CAS QD的粒径均匀，可以改善抗蠕变稳定性。理论计算表明，由Cu 3d，Cu 3p和S 3p起作用的空间电荷限制电流（SCLC）由于其量子限制并在电场下形成传导路径而充当电子自陷中心，负责电阻切换效果。本文证明了CAS QD在存储设备中作为一种新型的电阻开关材料很有希望，可用于促进下一代非易失性存储的应用。