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Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
Quantum Electronics ( IF 0.9 ) Pub Date : 2020-08-05 , DOI: 10.1070/qel17323
Yu.K. Bobretsova , D.A. Veselov , A.A. Klimov , V.A. Kryuchkov , I.S. Shashkin , S.O. Slipchenko , N.A. Pikhtin

Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 – 1.1 mm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 – 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated.

中文翻译:

大功率AlGaAs / InGaAs / GaAs半导体激光器中的泄漏波

研究了基于AlGaAs / InGaAs / GaAs异质结构的激光器,其光谱范围为1.0 – 1.1 mm,以优化包层。分析了包层的厚度和组成对激光波导辐射泄漏的影响。结果表明,对于0.86-1.24μm的包层厚度,它几乎不影响输出光功率。证明了激光反射镜的晶体长度和反射率对泄漏波的影响。
更新日期:2020-08-06
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