Transient current in transistor-like nanostructures has been studied by a model of a few electrons confined in a one-dimensional effective potential consisting of three quantum wells, `source', `gate', and `drain'. The time-dependent Schroeodinger equation for the electrons has been integrated relying on the symplectic integrator method and the transient current has been calculated as the flux of the probability density of electrons absorbed by the complex absorbing potential placed at the far edge of the drain region. The electrons are initially placed in the source domain as their lowest-energy state for a given spin multiplicity and the source - drain current has been calculated for different gate potential heights. The current for different spin configurations has shown strong emission at different values of the gate potential, suggesting use of the studied nanostructures for extracting current with a specific spin configuration from spin-unpolarized normal current. Dependence of the current emission on electron correlation has also been studied by changing the size of the source domain. The current has shown appreciable differences for different spin configurations for the medium and strong confinement regimes, while these differences become smaller for smaller confinement and tend to diminish in the weak limit of confinement. This observed trend has been rationalized on the basis of the formation of the Wigner lattice states.

中文翻译：

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类晶体管纳米结构中的自旋相关瞬态电流

晶体管类纳米结构中的瞬态电流已通过限制在一维有效电位中的几个电子模型进行了研究，该一维有效电位由三个量子阱“源”、“门”和“漏”组成。依赖于辛积分器方法对电子的瞬态薛定谔方程进行积分，并计算瞬态电流作为被放置在漏区远边缘的复合吸收电位吸收的电子概率密度的通量。对于给定的自旋多重性，电子最初位于源极域中作为它们的最低能量状态，并且源极-漏极电流已针对不同的栅极电位高度进行计算。不同自旋配置的电流在不同的栅极电位值下显示出强烈的发射，建议使用所研究的纳米结构从自旋非极化正常电流中提取具有特定自旋配置的电流。还通过改变源域的大小研究了电流发射对电子相关性的依赖性。对于中等和强约束机制，电流显示出不同自旋配置的明显差异，而对于较小的约束，这些差异变得更小，并在弱约束范围内趋于减小。这种观察到的趋势已根据 Wigner 晶格状态的形成合理化。还通过改变源域的大小研究了电流发射对电子相关性的依赖性。对于中等和强约束机制，不同自旋配置的电流显示出明显的差异，而对于较小的约束，这些差异变得更小，并且在弱约束范围内趋于减小。这种观察到的趋势已根据 Wigner 晶格状态的形成合理化。还通过改变源域的大小研究了电流发射对电子相关性的依赖性。对于中等和强约束机制，不同自旋配置的电流显示出明显的差异，而对于较小的约束，这些差异变得更小，并且在弱约束范围内趋于减小。这种观察到的趋势已根据 Wigner 晶格状态的形成合理化。