Structural coloration techniques have improved display science due to their high durability in terms of resistance to bleaching and abrasion, and low energy consumption. Here, we propose and demonstrate an all-solid-state, large-area, lithography-free color filter that can switch structural color based on a doped semiconductor. Particularly, an indium-gallium-zinc-oxide (IGZO) thin film is used as a passive index-changing layer. The refractive index of the IGZO layer is tuned by controlling the charge carrier concentration; a hydrogen plasma treatment is used to control the conductivity of the IGZO layer. In this paper, we verify the color modulation using finite difference time domain simulations and experiments. The IGZO-based color filter technology proposed in this study will pave the way for charge-controlled tunable color filters displaying a wide gamut of colors on demand.

中文翻译：

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掺杂铟镓锌氧化物半导体的结构颜色切换

结构着色技术因其在抗漂白和耐磨方面的高耐久性以及低能耗而改进了显示科学。在这里，我们提出并展示了一种全固态、大面积、无光刻的滤色器，它可以基于掺杂半导体切换结构颜色。特别地，使用铟镓锌氧化物（IGZO）薄膜作为被动折射率变化层。IGZO 层的折射率通过控制电荷载流子浓度来调整；使用氢等离子体处理来控制 IGZO 层的导电性。在本文中，我们使用有限差分时域模拟和实验来验证颜色调制。