Abstract Dense and uniform diamond nanocone arrays on titanium substrate were constructed by using bias-assisted reactive ion etching (RIE) of diamond films in a microwave plasma chemical vapor deposition (MPCVD) system. A hydrogen/argon mixture was employed as work gas with ratio of 3/1. The formation of nanocone structure was generated the lengthways physical bombardment/sputtering by argon ions, and selective chemical reaction of graphite and disordered carbons by hydrogen atoms and ions. The structure, size, and density depended on the substrate bias. The surface morphology of diamond film and nanostructures were characterized by field emission scanning electron microscope (FESME), and the composition of diamond film and nanostructures were characterized by Raman spectra. The Stopping and Range of Trons in Matter (SRIM) software was used to simulate the bombardment effect of the diamond film on different Ar+ ion incident angles during the etching process. The experimental results showed substrate bias at −180 V and −210 V was beneficial to the formation of high density, small size and sharp nanocones, meanwhile larger bias contributed to the formation of large size nanocones. Besides, as-prepared nanocones still maintained significant diamond phase.

中文翻译：

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基底偏置对反应离子蚀刻金刚石纳米结构的影响

摘要 在微波等离子体化学气相沉积（MPCVD）系统中，利用偏压辅助反应离子刻蚀（RIE）金刚石薄膜，在钛基底上构建致密且均匀的金刚石纳米锥阵列。采用比例为 3/1 的氢气/氩气混合物作为工作气体。纳米锥结构的形成是由氩离子的纵向物理轰击/溅射以及氢原子和离子对石墨和无序碳的选择性化学反应产生的。结构、尺寸和密度取决于衬底偏置。金刚石薄膜和纳米结构的表面形貌通过场发射扫描电子显微镜（FESME）表征，金刚石薄膜和纳米结构的组成通过拉曼光谱表征。物质中的停止和射程（SRIM）软件用于模拟刻蚀过程中金刚石薄膜对不同Ar+离子入射角的轰击效应。实验结果表明-180 V和-210 V的衬底偏压有利于形成高密度、小尺寸和尖锐的纳米锥，同时较大的偏压有助于形成大尺寸的纳米锥。此外，所制备的纳米锥仍然保持显着的金刚石相。