当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation
Semiconductors ( IF 0.7 ) Pub Date : 2020-08-05 , DOI: 10.1134/s1063782620080059
E. V. Astrova , V. P. Ulin , A. V. Parfeneva , A. V. Nashchekin , V. N. Nevedomskiy , M. V. Baidakova

Abstract

A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising the annealing temperature of mixtures of SiO and CFx powders in a quasi-closed volume to 1000°C and higher leads to the formation of whisker-like SiC nanocrystals. It is found that, in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapor with carbon monoxide, the previously undescribed interaction of CO with gas-phase silicon difluoride SiF2 takes part in their formation. At temperatures below 1200°C, this reaction is dominant and makes the most pronounced contribution to the yield of SiC nanowires.



中文翻译:

碳氟化合物与一氧化硅的相互作用和SiC纳米线的形成过程

摘要

对在非化学计量的一氟化碳存在下一氧化硅的热碳化过程的研究表明,将准封闭体积中的SiO和CF x粉末混合物的退火温度提高到1000°C或更高,会导致形成晶须状SiC纳米晶体。发现,与由于SiO蒸气与一氧化碳的相互作用而导致的SiC纳米线的已知结晶平行,先前未描述的CO与气相二氟化硅SiF 2的相互作用参与了它们的形成。在低于1200°C的温度下,该反应占主导地位,并且对SiC纳米线的产量做出了最明显的贡献。

更新日期:2020-08-06
down
wechat
bug