Transfer phenomenon of charge carriers in crystals of Ca(Al0.1Ga0.9)2S4:Eu2+,Modern Physics Letters B

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Transfer phenomenon of charge carriers in crystals of Ca(Al0.1Ga0.9)2S4:Eu2+
Modern Physics Letters B ( IF 1.9 ) Pub Date : 2020-08-05 , DOI: 10.1142/s0217984920503443
G. S. Hadjieva ₁ , K. O. Taghiyev ₂ , E. G. Asadov ₁ , F. A. Kazimova ₁ , T. Sh. Ibragimova ₁ , O. B. Taghiyev _{1,

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Affiliation

Research study of volt-amperage properties (VAP) of [Formula: see text] crystals determined the mechanism of current flow though the studied samples and this mechanism is based on barrier Schottky emission and emission of Franklin–Paul. The dielectric constant of the material, height of the potential barrier on metal–semiconductor border, concentration of the traps and the effective mass of electrons are calculated.

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