We report on the growth of NdFeAs(O,H) epitaxial thin films on MgO (001) substrates and their electrical transport properties. The maximum carrier density of the NdFeAs(O,H) films was more than twice as large as that of our NdFeAs(O,F) films. This enabled us to investigate the physical properties of heavily electron doped NdFeAsO, which could not be achieved with NdFeAs(O,F). The irreversibility field H irr of NdFeAs(O,H) was larger than that of NdFeAs(O,F) for H || c due to the decrease in the anisotropy of the upper critical field. A very high critical current density of 17 MA cm −2 was recorded at 4 K, which corresponds to about 13% of the depairing current density of NdFeAs(O,F).

中文翻译：

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高临界电流密度的NdFeAs（O，H）外延薄膜

我们报告了MgO（001）衬底上NdFeAs（O，H）外延薄膜的生长及其电传输性能。NdFeAs（O，H）膜的最大载流子密度是我们NdFeAs（O，F）膜的最大载流子密度的两倍以上。这使我们能够研究重电子掺杂的NdFeAsO的物理性质，而NdFeAs（O，F）则无法实现。对于H ||，NdFeAs（O，H）的不可逆场H irr大于NdFeAs（O，F）的不可逆场。c是由于上临界场的各向异性减小。在4 K下记录到非常高的临界电流密度17 MA cm -2，大约相当于NdFeAs（O，F）的去对电流密度的13％。