We fabricated BaSi 2 films on Si substrates at 600 °C by sputtering under various radio-frequency powers ( P BaSi2 ). Rutherford backscattering spectrometry revealed that the atomic ratio of Ba and Si reaching the substrate remained unchanged regardless of P BaSi2 . However, the photoresponsivity decreased with P BaSi2 . This is ascribed to the increase of vacancy-type defects from the peak shift of the A g mode, the most intense Raman line, to lower wavenumbers with P BaSi2 . The photoresponsivity reached a maximum of 0.67 A W −1 at a bias voltage of 0.1 V at P BaSi2 = 20 W, the highest ever achieved for undoped BaSi 2 films.

中文翻译：

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射频功率对溅射形成的BaSi 2薄膜光响应性增强的影响

我们通过在各种射频功率（P BaSi2）下溅射在600°C的Si衬底上制备了BaSi 2膜。卢瑟福背散射光谱法表明，与P BaSi2无关，到达衬底的Ba和Si的原子比保持不变。但是，P BaSi2使光响应性降低。这归因于空位型缺陷的增加，从最强拉曼线A g模的峰位移到P BaSi2的较低波数。在P BaSi2 = 20 W的情况下，在0.1 V的偏置电压下，光敏度最大达到0.67 A W -1，这是未掺杂BaSi 2膜的最高光响应度。