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Ferroelectric tunnel junctions with high tunnelling electroresistance
Nature Electronics ( IF 34.3 ) Pub Date : 2020-08-05 , DOI: 10.1038/s41928-020-0463-3 Xinran Wang , Jianlu Wang
Nature Electronics ( IF 34.3 ) Pub Date : 2020-08-05 , DOI: 10.1038/s41928-020-0463-3 Xinran Wang , Jianlu Wang
A van der Waals ferroelectric tunnel junction with asymmetric metal and graphene contacts exhibits a high resistance ratio between on and off states, and could be of value in the development of low-power computing.
中文翻译:
具有高隧道电阻的铁电隧道结
具有不对称金属和石墨烯触点的Van der Waals铁电隧道结在导通和截止状态之间表现出高电阻比,并且可能在低功耗计算的发展中具有价值。
更新日期:2020-08-05
中文翻译:
具有高隧道电阻的铁电隧道结
具有不对称金属和石墨烯触点的Van der Waals铁电隧道结在导通和截止状态之间表现出高电阻比,并且可能在低功耗计算的发展中具有价值。