Dual gate field-effect transistors (DGISFETs) have prompted interest because of the sensitivities higher than the Nernst limit through capacitive coupling. The bottom gate (BG)–semiconductor interface plays a crucial role in the sensitivity enhancement. Stacked gate dielectrics are utilized for the improved performance of the metal–oxide–semiconductors and the thin-film transistors while the utilization of stacked dielectrics is limited to DGISFETs. The use of a stacked BG dielectric for the sensitivity enhancement of DGISFETs is the impetus of the current work. Four DGISFETs were used for elucidation of the significance of the BG dielectric–semiconductor interface on the sensitivity of DGISFETs. The influence of the material properties on the sensitivity of the DGISFETs was studied with the help of X-ray photoelectron spectroscopy depth profiling and atomic force microscopy. The pH sensitivities of two DGISFETs were compared with two different BG dielectrics (silicon dioxide and the stack of yttrium oxide/silicon dioxide) and yttrium oxide as TG dielectric. For further confirmation, DGISFETs with tantalum pentoxide as the TG dielectric with the same set of BG dielectrics were studied. The experimentally obtained pH sensitivities were validated through the simulation results. A highlight of this study is elucidation of the role of the BG dielectric–semiconductor interface on the performance of the DGISFETs. Sensitivity values of 847 and 796 mV/pH were obtained with yttrium oxide and tantalum pentoxide as the TG dielectrics, respectively.

中文翻译：

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使用堆叠式底栅电介质增强双栅场效应晶体管的灵敏度

双栅极场效应晶体管（DGISFET）引起了人们的关注，因为其灵敏度高于通过电容耦合实现的能斯特极限。底栅（BG）-半导体接口在提高灵敏度方面起着至关重要的作用。堆叠的栅极电介质可用于改善金属氧化物半导体和薄膜晶体管的性能，而堆叠的电介质则仅限于DGISFET。使用堆叠的BG电介质来增强DGISFET的灵敏度是当前工作的推动力。四个DGISFET用于阐明BG介电-半导体界面对DGISFET灵敏度的重要性。利用X射线光电子能谱深度剖析和原子力显微镜研究了材料特性对DGISFET的灵敏度的影响。将两种DGISFET的pH敏感度与两种不同的BG电介质（二氧化硅和氧化钇/二氧化硅的堆叠）和氧化钇作为TG电介质进行了比较。为了进一步确认，研究了以五氧化二钽作为TG电介质和同一组BG电介质的DGISFET。通过仿真结果验证了实验获得的pH敏感性。这项研究的重点是阐明BG电介质-半导体接口在DGISFET的性能中的作用。用氧化钇和五氧化钽作为TG电介质分别获得847和796 mV / pH的灵敏度值。