Metal-oxide-based electrodes play a crucial role in various transparent conductive oxide (TCO) applications. Among the p-type materials, nickel oxide is a promising electrically conductive material due to its good stability, large bandgap, and deep valence band. Here, we display pristine and 3 at.%V-doped NiO synthesized by the solvothermal decomposition method. The properties of both the pristine and 3 at.%V:NiO nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Raman spectroscopy, ultraviolet–visible spectroscopy (UV–vis), and X-ray photoelectron spectroscopy (XPS). The film properties were characterized by atomic force microscopy (AFM) and a source meter. Our results suggest that incorporation of vanadium into the NiO lattice significantly improves both electrical conductivity and hole extraction. Also, 3 at.%V:NiO exhibits a lower crystalline size when compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicate that vanadium is an excellent dopant for NiO.

中文翻译：

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透明导电氧化物的高导电钒掺杂NiO薄膜的简便合成

基于金属氧化物的电极在各种透明导电氧化物（TCO）应用中起着至关重要的作用。在p型材料中，氧化镍由于其良好的稳定性，大的带隙和较深的价带而成为有前途的导电材料。在这里，我们展示了通过溶剂热分解法合成的原始和3 at。％V掺杂的NiO。通过场发射扫描电子显微镜（FESEM），透射电子显微镜（TEM），X射线衍射仪（XRD），拉曼光谱，紫外可见光谱（）表征原始和3 at。％V：NiO纳米颗粒的特性紫外可见）和X射线光电子能谱（XPS）。通过原子力显微镜（AFM）和源计表征膜的性质。我们的结果表明，将钒掺入NiO晶格可显着改善电导率和空穴提取。同样，与原始氧化镍相比，3 at。％V：NiO的晶体尺寸较小，从而保持了表面粗糙度的降低。这些结果表明钒是NiO的优良掺杂剂。