In III-nitride quantum dots (QDs), optical transition rate is very low because of the large built-in electrostatic field caused by the spontaneous polarization (SP) and piezoelectric (PZ) effects. In this work, we study the screening potential which is a solution of the self-consistent Hartree equation taking into account the built-in electrostatic field and its effect on light emission characteristics of non-polar wurtzite (WZ) $\left(11\overline{2}0\right)$ GaN/AlN QD. It is found that the light emission intensity of the non-polar $\left(11\overline{2}0\right)$ GaN/AlN QD structure is expected to be about four times larger than that of the c-plane (0001) GaN/AlN QD structure because the y-polarized matrix elements in the non-polar QD are larger than that in the c-plane QD. These predictions indicate that non-polar GaN/AlN QD structure have strong potential for highly efficient opto-electronic devices.

中文翻译：

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用于高效光电器件的非极性纤锌矿（112¯0）GaN / AlN量子点

在III型氮化物量子点（QDs）中，由于自发极化（SP）和压电（PZ）效应引起的内置静电场很大，因此光跃迁速率非常低。在这项工作中，我们考虑了内置静电场及其对非极性纤锌矿（WZ）发光特性的影响，研究了作为自洽Hartree方程解的筛选潜力。$（11\overline{2}0）$GaN / AlN QD。发现非极性的发光强度$（11\overline{2}0）$GaN / AlN QD结构预计比c平面（0001）GaN / AlN QD结构大大约四倍，因为非极性QD中的y极化矩阵元素比c平面中的y极化矩阵元素大QD。这些预测表明，非极性GaN / AlN QD结构对于高效光电器件具有强大的潜力。