The silicon carbide (SiC) 3C polytype microparticles with p‐type conductivity are investigated by X‐band electron paramagnetic resonance (EPR) technique in a wide temperature interval. Morphological and Raman studies show that the mean particle diameter is ≈8 μm, and the SiC polytype is purely 3C. At T = 10 K, the EPR spectrum of the shallow boron acceptor substituting cubic site (B_K), with C_3V symmetry and anisotropic g‐ and A‐tensors resulting from static Jahn–Teller effect, is observed. At T > 30 K, a continuous transition from static to dynamic Jahn–Teller effect for B_K is detected. The temperature‐dependent B_K principal g‐values are explained by the transitions between the ground and excited vibronic states of B_K. At T = 130–150 K, the B_K center is characterized by T_d symmetry and isotropic g‐ and A‐tensors. At T = 60–190 K, an additional single EPR Lorentzian line with short spin relaxation times and isotropic g‐value close to B_K average g‐value is observed. It was explained by averaging the anisotropic spectrum caused by rapid transitions between the boron ground and excited vibronic states split by Jahn–Teller potential. In addition, the EPR signal from carbon vacancy with characteristic superhyperfine structure is observed at T = 10–298 K.

中文翻译：

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p型3C SiC微粒的磁共振研究

通过X波段电子顺磁共振（EPR）技术在较宽的温度范围内研究了具有p型导电性的碳化硅（SiC）3C多型微粒。形态和拉曼研究表明，平均粒径约为≈8μm，SiC的多晶型纯为3C。在T  = 10 K时，观察到了由立方位（B _K）取代的浅硼受体的EPR谱，具有C _3V对称性以及由静态Jahn-Teller效应引起的各向异性g和A张量。在T  > 30 K时，检测到B _K从静态到动态Jahn–Teller效应的连续过渡。温度相关的B _K原理g值由B _K的基态和激发振动态之间的过渡来解释。在T  = 130–150 K时，B _K中心的特征在于T _d对称性以及各向同性的g和A张量。在T  = 60–190 K时，附加的一条具有短自旋弛豫时间且各向同性g值接近于B _K平均g的EPR洛伦兹线值被观察到。它是通过平均各向异性光谱来解释的，该各向异性光谱是由硼基态与被Jahn-Teller势分裂的激发振动态之间的快速跃迁引起的。此外，在T  = 10–298 K处观察到具有特征性超超细结构的碳空位引起的EPR信号。