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Effect of the Implantation of Al + Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface
Semiconductors ( IF 0.7 ) Pub Date : 2020-08-05 , DOI: 10.1134/s1063782620080072
S. B. Donaev , B. E. Umirzakov

Abstract

Nanocrystalline phases and GaAlP films are obtained by implanting Al+ ions with E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, and their electronic and crystalline structures are studied. It is shown that the type and the lattice parameters of the three-component nanostructure are in good agreement with those for the substrate. The relationship between the band gap Eg and the sizes of the nanocrystalline phases is studied. It is established that quantum-size effects arise in the Ga0.6Al0.4P nanocrystalline phases in the case of surface sizes d of phases of less than 35–40 nm (3.5–4 nm thick).



中文翻译:

铝离子注入对GaP(111)表面组成,电子和晶体结构的影响

摘要

通过在GaP(111)单晶表面上以不同剂量注入E 0 = 1 keV的Al +离子获得纳米晶相和GaAlP膜,并研究了它们的电子和晶体结构。结果表明,三组分纳米结构的类型和晶格参数与衬底的结构和晶格参数非常吻合。研究了带隙E g与纳米晶相的尺寸之间的关系。已经确定,量子尺寸效应出现在GA 0.6的Al 0.4在面尺寸的情况P纳米晶相ð小于35-40纳米(厚3.5-4纳米)相。

更新日期:2020-08-05
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