Abstract

The phonon modes of quantum-cascade heterostructures based on binary and ternary semiconductor compounds are simulated. The dependences of the frequencies of the structure interface phonon modes on the wave vector in the layer plane and on the phase shift in the superlattice period are calculated. It is found that the range of variation in the quantum energy of phonon modes of the GaAs/Al_0.25Ga_0.75As structure does not exceed 2 meV. The calculated resulting interband scattering rate in the structure, taking into account the interface and confined modes, barely differs from that calculated in the bulk phonon approximation.

中文翻译：

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量子级联激光异质结构中的声子模和电子-声子相互作用分析

摘要

模拟了基于二元和三元半导体化合物的量子级联异质结构的声子模式。计算了结构界面声子模式的频率对层平面内波矢量和超晶格周期内相移的依赖性。发现GaAs / Al _0.25 Ga _0.75 As结构的声子模的量子能的变化范围不超过2meV。考虑到界面和局限模式，计算得出的结构中带间散射速率与体声子近似计算的结果几乎没有差异。