Abstract

The spatial and temporal dynamics of the optical loss and carrier density in the heterostructure of a semiconductor laser with a segmented contact are studied using an optical pump–probe technique based on the injection of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under study that is based on an AlGaAs/InGaAs/GaAs heterostructure and emits at wavelength of 1010 nm. It is demonstrated that employing probe light at a wavelength of 1560 nm enables sensitivity in measuring an internal optical loss of no less than 1 cm^–1. The segmented design of the current pumping region made it possible to estimate the absolute internal optical loss. It is shown that changing the configuration of the Fabry–Perot eigenmodes of the laser affects the carrier distribution and the internal optical loss both in the current pumping region and in the passive, current unpumped part of the laser chip.

中文翻译：

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通过光学探测研究半导体激光异质结构中光损失的空间和电流动力学

摘要

使用光学泵浦探针技术，基于将波长为1560 nm的探测辐射注入半导体激光芯片，研究了分段接触半导体激光器异质结构中光损耗和载流子密度的时空动态基于AlGaAs / InGaAs / GaAs异质结构的研究中，其发射波长为1010 nm。结果表明，使用1560 nm波长的探测光可以在测量内部光损耗不少于1 cm ^{–1时提高}灵敏度。。当前泵浦区域的分段设计使得可以估计绝对内部光学损耗。结果表明，改变激光器的法布里-珀罗本征模式的配置会影响载流子分布和内部光损耗，无论是在电流泵浦区域还是在激光芯片的无源，电流未泵浦部分。