当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effect of Oxygen Flow Rate in Zinc Oxide Radio Frequency Magnetron Sputtering on the Structural and Optical Properties of ZnO|PEDOT:PSS Inorganic|Organic Hetero-Junction
Semiconductors ( IF 0.7 ) Pub Date : 2020-08-05 , DOI: 10.1134/s1063782620080151
B. Boroomand Nasab , A. Kosarian , N. Alaei Sheini

Abstract

Highly transparent ZnO|PEDOT:PSS inorganic|organic hetero-junction were fabricated using thin (300 nm in thickness) ZnO prepared via radio frequency (RF) magnetron sputtering at different oxygen flow rates ranging from 0 to 20 sccm. The AFM images revealed that the average grain size decreased with increasing oxygen flow rate. In addition, the results of this analysis showed that with an increase in the oxygen flow rate, the average and RMS of surface roughness decreased. The energy gap measured for the zinc oxide layers deposited in the presence of oxygen with flow rates of 0, 5, 10, 15, and 20 sccm remained nearly constant at the value of 3.17 ± 0.01 eV indicating that the energy gap of ZnO layer was relatively independent of the Ar/O2 flow rate. In order to investigate the junction between zinc oxide and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), a 50-nm thick polymeric layer is deposited on a 300-nm zinc oxide layer by spin coating technique. The dark I(V) characteristics indicate that the reverse saturation current density is 2.89 × 10–7, 1.27 × 10–7, 1.96 × 10–7, 3.89 × 10–7, and 4.41 × 10–7 A/cm2 for oxygen flow rates of 0, 5, 10, 15, and 20 sccm, respectively. By increasing the oxygen flow rate, the ideality factor of the resulting Schottky barrier is 2.79, 1.96, 2.32, 2.96, and 3.03. The effective Schottky barrier height of 0.78, 0.8, 0.79, 0.77, and 0.76 eV was obtained for oxygen flow rates of 0, 5, 10, 15, and 20 sccm, respectively. It was found that the highest responsivity and the sensitivity obtained from UV-photocurrent of the nanostructures is for the samples deposited at oxygen flow rates between 5 to 10 sccm.



中文翻译:

氧化锌射频磁控溅射中氧气流速对ZnO | PEDOT:PSS无机|有机杂结的结构和光学性质的影响

摘要

使用通过射频(RF)磁控管溅射以0至20 sccm的不同氧气流量制备的薄(厚度为300 nm)的ZnO,制造出高度透明的ZnO | PEDOT:PSS无机异质结。AFM图像显示平均晶粒尺寸随氧气流速的增加而减小。另外,该分析结果表明,随着氧气流速的增加,表面粗糙度的平均值和均方根值均降低。流量为0、5、10、15和20 sccm的氧气存在下沉积的氧化锌层的能隙测量值几乎保持恒定,为3.17±0.01 eV,表明ZnO层的能隙为相对独立于Ar / O 2流量。为了研究氧化锌和聚(3,4-乙撑二氧噻吩)聚苯乙烯磺酸盐(PEDOT:PSS)之间的连接,通过旋涂技术在300-nm氧化锌层上沉积了50-nm厚的聚合物层。暗V)特征表明反向饱和电流密度是2.89×10 -7,1.27×10 -7,1.96×10 -7,3.89×10 -7,和4.41×10 -7 A /厘米2氧气流速分别为0、5、10、15和20 sccm。通过增加氧气流速,所得肖特基势垒的理想因子为2.79、1.96、2.32、2.96和3.03。当氧气流量分别为0、5、10、15和20 sccm时,有效肖特基势垒高度分别为0.78、0.8、0.79、0.77和0.76 eV。发现从纳米结构的UV-光电流获得的最高响应度和灵敏度是对于以5至10sccm的氧气流速沉积的样品。

更新日期:2020-08-05
down
wechat
bug