当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
The Effect of the Crystalline Structure Transformation in VO 2 |Glass by Inserting TiO 2 Buffer Layer and Its Application in Smart Windows
Semiconductors ( IF 0.7 ) Pub Date : 2020-08-05 , DOI: 10.1134/s106378262008014x
C. Liu , S. Wang , R. Li , J. Liu , M. Huang

Abstract

Vanadium dioxide (VO2) undergoes a reversible metal-insulator transition at low temperature, which has wide range of applications in smart windows and infrared detectors. However, the preparation of VO2 films with controllable phase on glass substrate is still limited. In this paper, it is shown that B-phase can be transformed into M-phase with monoclinic structure by inserting TiO2 buffer layer on glass substrate at low temperature of 400°C. This crystalline transformation might be attributed to that Ti atoms diffuse and form oxygen-deficient environments. Different thicknesses of buffer layers have different effect on characteristic of VO2 film. With 50-nm TiO2 buffer layer, the VO2|TiO2|glass film showed an abrupt resistance change with more than 2.5-order of magnitude across metal–insulator transition, and the visible-light transmittance value is as high as 55.5% with the solar modulation capability up to 8.6%. The current results are very important for the application in smart windows.



中文翻译:

TiO 2缓冲层的插入对VO 2 |玻璃中晶体结构转变的影响及其在智能窗中的应用

摘要

二氧化钒(VO 2)在低温下经历可逆的金属-绝缘体转变,在智能窗户和红外探测器中具有广泛的应用范围。然而,在玻璃基板上制备具有可控相的VO 2膜仍然受到限制。本文表明,通过在400℃的低温下将TiO 2缓冲层插入玻璃基板,可以将B相转变为具有单斜晶结构的M相。这种晶体转变可能归因于Ti原子扩散并形成缺氧环境。缓冲层的不同厚度对VO 2膜的特性有不同的影响。通过50 nm TiO 2缓冲层,VO 2| TiO 2 |玻璃膜在整个金属-绝缘体过渡过程中显示出突然的电阻变化,幅度超过2.5个数量级,可见光透射率值高达55.5%,太阳调制能力高达8.6%。当前结果对于智能窗口中的应用非常重要。

更新日期:2020-08-05
down
wechat
bug