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Fabrication of High-Performance Molybdenum Disulfide–Graphitic Carbon Nitride p–n Heterojunction Stabilized rGO/ITO Photoelectrode for Photoelectrochemical Determination of Dopamine
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2020-08-03 , DOI: 10.1021/acsaelm.0c00500
Sethupathi Velmurugan, Thomas C.-K. Yang

The construction of solar active photoelectrodes for photoelectrochemical purposes based on a heterojunction platform is one of the most promising strategies. Herein, a molybdenum disulfide–graphitic carbon nitride (MoS2–GCN) p–n heterojunction stabilized reduced graphene oxide/indium tin oxide (rGO/ITO) photoelectrode was fabricated and has been employed for the photoelectrochemical detection of the neurotransmitter dopamine (DA). First, the rGO was electrochemically reduced on an ITO slice in GO dispersion (pH = 7, −1.5–0 V potential window for 30 cycles) by using the cyclic voltammetry technique, and then the MoS2–GCN heterostructure was immobilized on rGO/ITO by the drop-casting method. The physicochemical characterization of the fabricated electrodes was performed by means of XRD, Raman, UV–vis DRS, EIS, PL, and SEM techniques. The type of MoS2 and GCN semiconductors and the p–n heterojunction formation between the MoS2 and GCN were investigated through the Hall effect and Mott–Schottky analyses. The fabricated electrode shows an enhanced photocurrent activity at 535 nm, which is confirmed from the UV-DRS measurement. The MoS2–GCN/rGO/ITO shows photoelectrochemical detection activity of dopamine in the linear response of 0.005–1271.93 μM with the detection limit of 1.6 nM. This MoS2–GCN/rGO/ITO electrode was tested for the determination of dopamine in human urine and serum samples.

中文翻译:

高性能二硫化钼-石墨氮化碳p-n异质结稳定rGO / ITO光电极的制备,用于光电化学测定多巴胺

基于异质结平台构建用于光电化学目的的太阳能活性光电极是最有前途的策略之一。本文制备了二硫化钼-石墨氮化碳(MoS 2 -GCN)p-n异质结稳定的还原氧化石墨烯/铟锡氧化物(rGO / ITO)光电极,并将其用于神经递质多巴胺(DA)的光电化学检测。首先,通过循环伏安技术,在GO分散液(pH = 7,−1.5–0 V电位窗口,持续30个循环)中在ITO切片上将rGO电化学还原,然后使用MoS 2通过滴铸法将–GCN异质结构固定在rGO / ITO上。通过XRD,拉曼,UV-vis DRS,EIS,PL和SEM技术对制成的电极进行了物理化学表征。该型MOS的2和GCN半导体和MOS之间的P-N异质结形成2和GCN是通过霍尔效应研究和莫特肖特基分析。制成的电极在535 nm处显示出增强的光电流活性,这可通过UV-DRS测量得到证实。MoS 2 –GCN / rGO / ITO在0.005–1271.93μM的线性响应中显示多巴胺的光电化学检测活性,检测极限为1.6 nM。此MoS 2-GCN / rGO / ITO电极经测试可测定人尿和血清样品中的多巴胺。
更新日期:2020-09-22
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