This paper is focused on studying the behavior of a GaAs pseudomorphic high electron mobility transistors (pHEMT) with respect to the temperature. The tested pHEMT is realized using the multilayer three‐dimensional (3‐D) monolithic microwave integrated circuit (MMIC) technology. The analysis is based on temperature‐dependent on‐wafer measurements carried out from 298 K to 373 K. The experiments consist of DC characteristics and scattering parameters in the broad frequency range from 45 MHz to 40 GHz. The effect of the temperature on the measured transistor performance is analyzed in detail and then, to gain a better insight and understanding of the device behavior, the achieved measurements are used for extraction and validation of a small‐signal equivalent‐circuit model for different temperature conditions. This study shows that, by heating the studied device, the observed performance variations depend remarkably on the selected bias condition. In particular, the output current and transconductance are degraded at higher gate‐source voltage and improved as the transistor is driven towards the pinch‐off. This is due to the counterbalancing of temperature‐dependent effects contributing in opposite ways to the resultant behavior of the transistor. Therefore, depending on the given application, an appropriate selection of the bias and temperature conditions is essential to guarantee adequate transistor performance.

中文翻译：

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多层3-M MMIC技术中温度对GaAs pHEMT对DC和微波特性的影响的洞察力

本文专注于研究GaAs伪形高电子迁移率晶体管（pHEMT）相对于温度的行为。使用多层三维（3D）单片微波集成电路（MMIC）技术可实现测试的pHEMT。该分析基于在298 K至373 K范围内进行的随温度变化的晶圆上测量。该实验由45 MHz至40 GHz宽频率范围内的直流特性和散射参数组成。详细分析温度对所测晶体管性能的影响，然后，为了更好地了解和理解器件性能，将获得的测量结果用于提取和验证不同温度下的小信号等效电路模型条件。这项研究表明，通过加热所研究的器件，观察到的性能变化明显取决于所选的偏置条件。尤其是，在较高的栅极-源极电压下，输出电流和跨导会降低，并且随着晶体管向夹断方向的驱动，输出电流和跨导会有所改善。这是由于温度相关效应的平衡以相反的方式影响了晶体管的最终性能。因此，根据给定的应用，正确选择偏置和温度条件对于保证足够的晶体管性能至关重要。这是由于温度相关效应的平衡以相反的方式影响了晶体管的最终性能。因此，根据给定的应用，正确选择偏置和温度条件对于保证足够的晶体管性能至关重要。这是由于温度相关效应的平衡以相反的方式影响了晶体管的最终性能。因此，根据给定的应用，正确选择偏置和温度条件对于保证足够的晶体管性能至关重要。