In this work, the Ge condensation effect of amorphous SiGe on a SiO₂/Si substrate is systematically investigated. As Ge condensation proceeds, the Ge content gradually enriches from an initial 0.24–1.0 with improving crystal quality. The enlargement of the grain size results in gradual roughening of the surface roughness. As the Ge content reaches 0.36, a high hole mobility of ∼211 cm² V⁻¹ s⁻¹ is achieved with a hole concentration of ∼3.7 10¹⁵ cm⁻³. As the Ge content further accumulates, the grain number increases resulting in a higher hole concentration. The film mobility gradually deteriorates probably due to the following factors: strong impurity scattering at high hole concentration, increase of grain boundaries, decrease of SiGe thickness, and increase of surface roughness. A polycrystalline Ge-on-insulator with a hole concentration of ∼5.1 10¹⁸ cm⁻³ and mobility of ∼15 cm² V⁻¹ s⁻¹ is ultimately fabricated. The investigation provides a promising method to fabricate a high hole mobility SiGe-on-insulator platform from low-cost amorphous SiGe.

在这项工作中，系统地研究了非晶SiGe在SiO ₂ / Si衬底上的Ge凝聚效应。随着Ge缩合的进行，Ge含量从最初的0.24–1.0逐渐富集，从而提高了晶体质量。晶粒尺寸的增大导致表面粗糙度的逐渐变粗糙。当Ge含量达到0.36时，空穴迁移率约为3.7 10 ¹⁵ cm ^-3时，空穴迁移率达到约211 cm ² V ^-1 s ^-1。。随着Ge含量的进一步累积，晶粒数量增加，导致更高的空穴浓度。膜迁移率逐渐劣化可能归因于以下因素：在高空穴浓度下强的杂质散射，晶界增加，SiGe厚度减小以及表面粗糙度增大。最终制造出具有约5.1 10 ¹⁸ cm ^-3的空穴浓度和约15 cm ² V ^-1 s ^-1的迁移率的多晶绝缘体上的Ge 。该研究提供了一种有前途的方法，可以用低成本的非晶SiGe来制造高空穴迁移率的绝缘体上SiGe平台。