Feasibility of many emergent phenomena that intrinsic magnetic topological insulators (TIs) may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi₂Te₄)(Bi₂Te₃)_m with m = 0, ⋯, 6. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the m value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi₂Te₄ (m = 0) to MnBi₄Te₇ (m = 1) and MnBi₆Te₁₀ (m = 2). Further increase in m leads to change of the overall magnetic behavior to ferromagnetic (FM) one for (m = 3), while the interlayer coupling almost disappears. In this way, the AFM and FM TI states are, respectively, realized in the m = 0, 1, 2 and m = 3 cases. For large m numbers a hitherto-unknown topologically nontrivial phase can be created, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the MnBi₂Te₄ building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi₂Te₄)(Bi₂Te₃)_m allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.

本征磁性拓扑绝缘体（TI）可能存在的许多新兴现象的可行性，在很大程度上取决于我们设计和有效调整其电子和磁性结构的能力。在这里，我们报道了范德华化合物（MnBi ₂ Te ₄）（Bi ₂ Te ₃）_m的同源系列中的一大类本征磁性TI，其中m  = 0，⋯，6。磁性，电子，因此，这些材料的拓扑特性在很大程度上取决于m值，因此高度可调。相邻Mn层之间的反铁磁（AFM）耦合在从MnBi ₂移动时会大大减弱Te ₄（m  = 0）至MnBi ₄ Te ₇（m  = 1）和MnBi ₆ Te ₁₀（m  = 2）。m的进一步增加导致总的磁性变化为（m  = 3）的铁磁（FM ），而层间耦合几乎消失。这样，在m  = 0、1、2和m  = 3的情况下，分别实现了AFM和FM TI状态。对于大米可以创建迄今未知的拓扑非平凡的数字，在该温度下，在相应的临界温度以下，由MnBi ₂ Te ₄结构单元形成的非相互作用2D铁磁体的磁化沿第三方向无序。（MnBi ₂ Te ₄）（Bi ₂ Te ₃）_m中本征磁性TI相的多样性允许有效地设计功能范德华异质结构，以进行拓扑量子计算，以及反铁磁和2D自旋电子学。