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Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T′- MoS 2
Communications Materials Pub Date : 2020-08-03 , DOI: 10.1038/s43246-020-00050-w
Naoki Katsuragawa , Mizuki Nishizawa , Taketomo Nakamura , Taiki Inoue , Sahar Pakdel , Shigeo Maruyama , Shingo Katsumoto , Juan Jose Palacios , Junji Haruyama

The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T′-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2 h and e2/4 h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.



中文翻译:

激光图案化几层1T'-MoS 2中的室温量子自旋霍尔相

自从2D材料研究开始以来,二维拓扑绝缘体的量子自旋霍尔(QSH)相就引起了越来越多的关注。虽然已经报道了原子薄层中大的间隙消失且边缘间隙消失,但是通过电阻测量对QSH相的验证相对较少。这部分是由于在较大的样品区域上由基板引起的整体间隙的均匀性差和/或由氧化引起的缺陷。在这里,我们报告了使用低功率和短时间激光束照射在室温下在图案化为2H半导体相的几层MoS 2的1T'相中的QSH相的观察结果。两种不同的电阻的测量揭示标志传输电导值,〜戊2 /2 H和E 2/ 4小时,如理论所预测。磁场依赖性,扫描隧道谱和计算支持室温QSH相的出现。尽管仍然需要进一步的实验验证,但我们的结果为室温拓扑设备提供了可行的应用。

更新日期:2020-08-03
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