Abstract In this paper, we have deposited a tri-layer film stack of Ta (25, 50, 75 and 100 nm)/FeGaB (100 nm)/Ta (5 nm) onto Si substrates, and studied ferromagnetic resonance (FMR) properties of the Ta buffer layer thickness and temperature dependence. The surface morphology of the tri-layer film stack is captured by Atomic Force Microscopy (AFM). The static magnetic properties for different buffer layer thickness reveal that both coercive field and remanent magnetization decrease for increasing the Ta buffer layer thickness due to the disturbance of magnetic moments from the FeGaB layer. The dynamic ferromagnetic properties of all samples suggest that narrow inhomogeneous linewidth and low damping factor are obtained for different Ta buffer layer thickness. Ta (100)/FeGaB (100)/Ta (5) film stack shows the lowest damping from 100 K to 300 K. The buffer layer thickness and temperature dependence studies indicate that the interface damping dominates at low temperature 100 K. Hence, these studies are of great importance for development of magnetostrictive microwave devices applications.

中文翻译：

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Ta/FeGaB/Ta 三层缓冲层厚度和温度相关磁动力学特性

摘要 在本文中，我们在 Si 衬底上沉积了 Ta (25、50、75 和 100 nm)/FeGaB (100 nm)/Ta (5 nm) 的三层薄膜堆叠，并研究了铁磁共振 (FMR) 特性。 Ta 缓冲层厚度和温度依赖性。通过原子力显微镜 (AFM) 捕获三层薄膜堆叠的表面形态。不同缓冲层厚度的静磁特性表明，由于来自 FeGaB 层的磁矩干扰，随着 Ta 缓冲层厚度的增加，矫顽场和剩磁均降低。所有样品的动态铁磁特性表明，对于不同的 Ta 缓冲层厚度，可以获得窄的不均匀线宽和低阻尼因子。Ta (100)/FeGaB (100)/Ta (5) 薄膜堆叠在 100 K 到 300 K 范围内显示出最低的阻尼。