Abstract

We describe a nondestructive technique for automated analysis of deflection of substrate-mounted membrane structures, which are a key element of devices based on microelectromechanical systems (MEMS devices). The technique includes analysis of substrates with an optical profiler operating in a specialized mode and mathematical processing of measurement results. The technique allows determining the magnitude and sign of deflection of membrane structures for each measurement area. The procedure results in grading the value of deflection and detecting the following types of the state of membrane structures, which are important for assessing the yield and reliability of MEMS devices based on these structures: separation or rupture of the structure, its significant deflection, its slight deflection, and lack of a deflection. All results are displayed in map format on the surface of a substrate with membrane structures with the ability to access more detailed data. The developed technique makes it possible to localize regions with a maximum, predetermined, and low yield of suitable crystals of MEMS devices, as well as flawed regions over the entire substrate surface. The use of the technique significantly increases the accuracy and reduces the measurement time for estimating the yield of suitable membrane structures, and also makes it possible to adjust the process route so as to increase the yield of suitable crystals of MEMS devices.

中文翻译：

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快速无损技术分析位于基板上的膜的变形

摘要

我们描述了一种无损技术，用于自动化分析安装在基板上的膜结构的挠度，这是基于微机电系统（MEMS器件）的设备的关键要素。该技术包括使用以特殊模式运行的光学轮廓仪对基板进行分析，并对测量结果进行数学处理。该技术允许确定每个测量区域的膜结构的变形幅度和符号。该过程导致对挠度值进行分级并检测以下类型的膜结构状态，这对于评估基于这些结构的MEMS器件的成品率和可靠性很重要：结构的分离或破裂，其显着挠度，轻微的偏斜，并且没有偏斜。所有结果均以地图格式显示在具有膜结构且可以访问更详细数据的膜表面上。所开发的技术使得可以以最大，预定和低产率的MEMS器件合适晶体定位区域，以及整个基板表面上的缺陷区域。该技术的使用显着提高了准确性并减少了用于估计合适的膜结构的成品率的测量时间，并且还使得可以调节工艺路线，从而提高MEMS器件的合适晶体的成品率。MEMS器件的合适晶体的成品率低，以及整个衬底表面上的缺陷区域。该技术的使用显着提高了准确性并减少了用于估计合适的膜结构的成品率的测量时间，并且还使得可以调整工艺路线以增加MEMS器件的合适晶体的成品率。MEMS器件的合适晶体的成品率低，以及整个基板表面上的缺陷区域。该技术的使用显着提高了准确度并减少了用于估计合适的膜结构的产率的测量时间，并且还使得可以调节工艺路线以增加MEMS器件的合适的晶体的产率。