Electrochemical impedance spectroscopy is used to study red and green quantum-dot light-emitting diodes devices. The high-frequency loop is interpreted in terms of the thickness, dielectric constant, and resistivity distribution of the hole-injection layer. The analysis employed the device capacitance obtained from a measurement model analysis, the film thickness measured by scanning electron microscopy, and an interpretation of the impedance based on a power-law model. Impedance measurements performed on hole-transport–only devices yielded results that were consistent with the interpretation of the high-frequency capacitive loop in terms of the properties of the hole-injection layer.

中文翻译：

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QLED器件上的阻抗测量：根据材料特性分析高频环路

电化学阻抗谱用于研究红色和绿色量子点发光二极管器件。高频回路是根据空穴注入层的厚度，介电常数和电阻率分布来解释的。该分析采用通过测量模型分析获得的器件电容，通过扫描电子显微镜测量的膜厚度以及基于幂律模型的阻抗解释。在仅空穴传输设备上进行的阻抗测量得出的结果与高频电容环路在空穴注入层特性方面的解释一致。