The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe_1−xSe_x single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe_1−xSe_x are examined for different Se concentrations. CdTe_1−xSe_x single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 10¹⁷ cm⁻³ As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 10¹⁷ cm⁻³. These results help us to overcome the current roadblocks in device performance.

CdTe太阳能电池的光伏性能主要受低掺杂和短少数载流子寿命的限制。V族元素掺杂和硒合金化对调节这些基本的CdTe特性具有重要影响。在本文中，我们报道了在行进加热器方法中使用金属Cd作为溶剂生长p型As掺杂，富Cd的CdTe ₁ - _x Se _x单晶的生长。对于不同的硒浓度，检查了CdTe _{1- x} Se _x的结构和电性能。CdTe的_{1- X}硒_X单晶（0≤  X  ≤0.5）与闪锌矿结构表明均匀的组合物。10¹⁷ 厘米^-3作为兴奋剂活化效率可保持在接近50％的X  ≤0.2。硒合金化导致掺杂10 ¹⁷  cm ^-3附近的样品的少数载流子寿命超过30 ns 。这些结果有助于我们克服设备性能方面的当前障碍。