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Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
Photonics Research ( IF 7.6 ) Pub Date : 2020-07-31 , DOI: 10.1364/prj.391075
Luca Sulmoni , Frank Mehnke , Anna Mogilatenko , Martin Guttmann , Tim Wernicke , Michael Kneissl

The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10−4 Ω·cm2 whereas for higher Al mole fraction the IV characteristics are rectifying. Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing. Compositional analysis confirmed an Al enrichment at the interface. The interfacial nitride-based layer in n-contacts on n‐Al0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen. The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed. Finally, ultraviolet C (UVC) LEDs grown on n‐Al0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120 μW at 20 mA in cw operation.

中文翻译:

高 Al 摩尔分数 n-AlGaN 层上 V/Al 基 n 接触的电性能和微观结构形成

研究了 n-AlxGa1-xN 上 V/Al 基 n 触点的电气和结构特性,Al 摩尔分数 x 范围从 x=0.75 到 x=0.95。欧姆 n 接触达到 x=0.75,接触电阻率为 5.7×10-4 Ω·cm2,而对于更高的 Al 摩尔分数,IV 特性正在调整。透射电子显微镜显示热退火后在金属/半导体界面处形成薄的结晶 AlN 层。成分分析证实了界面处的铝富集。n-Al0.9Ga0.1N 上 n 触点中的界面氮化物基层部分是非晶态的,并且被氧严重污染。讨论了铝在具有非常高 Al 摩尔分数的 n-AlGaN 上的 n 接触的金属堆叠中的作用和由此产生的限制。最后,在 n-Al0.87Ga0 上生长的紫外 C (UVC) LED。
更新日期:2020-07-31
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