Two-dimensional materials are gaining more and more attention in the field of electronic devices because of their unique advantages, such as high crystalline quality and clean and flat contact planes; compared to traditional materials, the use of two-dimensional materials as the working layer of a resistive random-access memory (RRAM) has the potential to further reduce the device size and enhance its performance. Herein, a black phosphorus (BP) single crystal flake passivated by hafnium oxide is used as the working layer for an RRAM. The devices show a switching on/off ratio of 10² in more than 100 cycles, and others can even be as high as 10⁶. We speculated the working mechanism of the BP RRAM based on the results of serial experiments and transport analysis.

中文翻译：

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基于单晶黑磷片/ HfOx结构的电阻式存储器

二维材料因其独特的优势（例如高结晶质量和清洁且平坦的接触面）而在电子设备领域越来越受到关注。与传统材料相比，使用二维材料作为电阻式随机存取存储器（RRAM）的工作层有可能进一步减小器件尺寸并增强其性能。在此，被氧化f钝化的黑磷（BP）单晶薄片被用作RRAM的工作层。这些设备在超过100个循环中显示出10 ^2的开/关比，其他设备甚至高达10 ⁶。根据串行实验和传输分析的结果，我们推测了BP RRAM的工作机制。