A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

中文翻译：

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基于InAs的量子热电子晶体管的共振输运研究

报道了对由InAs / AlSb异质结构制成的量子热电子晶体管中的传输的研究。结果表明，与具有较薄发射极的晶体管相比，具有较厚发射极的量子热电子晶体管可有效地防止寄生基极电流。所制造器件的静态特性表明，采用厚发射极设计的晶体管，电流增益提高了9，集电极击穿电压提高了1.5V。在经过优化的器件中，电流主要由快速谐振隧穿控制，这对于它们作为高频晶体管的未来发展很有希望。