The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor, Δ, double-logarithmic plot of normalized switching energy barrier, E, and saturation magnetization, M_s, and their exponential slope, n. Δ was calculated using the string method under the simulation conditions of domain wall motion switching. n increased with the increasing thickness of the damaged layer of the sidewall. Notably, the sidewall damage can be explained by the reduction in M_s and exchange stiffness constant, A_s, rather than the interfacial perpendicular anisotropy. The findings of this study are important for controlling and improving the process damage in the mass production of p-MTJs in STT-MRAM.

中文翻译：

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假设边界层在垂直磁化的磁性隧道结中受损，采用串方法对开关能垒的温度依赖性进行微磁模拟

基于热稳定性因子，讨论了自旋转移转矩磁阻随机存取存储器（STT-MRAM）的核心器件垂直磁隧道结（p -MTJs）侧壁处的磁损伤的影响， Δ，归一化开关能垒E和饱和磁化强度M _s的双对数图，以及它们的指数斜率n。在域壁运动切换的模拟条件下，使用弦法计算Δ。n随着侧壁受损层厚度的增加而增加。值得注意的是，侧壁损伤可以通过减少M _s来解释_。并交换刚度常数A _s，而不是界面垂直各向异性。这项研究的发现对于控制和改善STT-MRAM中p -MTJ的批量生产过程中的工艺损伤非常重要。