Abstract The Bi2Se3 whisker temperature dependencies of resistance with palladium doping concentration of (1 ÷ 2)×1019 cm−3 were studied in the range of 1.5 ÷ 77 K. At the temperature of 5.3 K there was found a sharp drop in the whisker resistance. This effect can be explained as a contribution of two processes: electron localization and superconductivity at temperatures under 5.3 K. The magnetoresistance in Bi2Se3 whiskers with n-type conductivity and diverse concentration of Pd that correspond to the metal side of the MIT (metal-insulator transition) was studied at low temperatures and magnetic field in the range of 0 ÷ 10 T. The magnetoconductance was considered in the structure by the weak antilocalization model and attached with subsurface layers of Bi2Se3 whiskers.

中文翻译：

---

Bi2Se3晶须的磁输运特性：超导性和弱局域化

摘要 在 1.5 ÷ 77 K 范围内研究了 Bi2Se3 晶须电阻随钯掺杂浓度为 (1 ÷ 2)×1019 cm−3 的温度依赖性。在 5.3 K 的温度下，发现晶须电阻急剧下降. 这种效应可以解释为两个过程的贡献：电子在 5.3 K 以下的温度下的定域化和超导性。 Bi2Se3 晶须中的磁阻具有 n 型导电性和不同浓度的 Pd，对应于 MIT（金属绝缘体）的金属侧过渡）在低温和 0 ÷ 10 T 范围内的磁场下进行研究。弱反局域模型在结构中考虑了磁导，并附有 Bi2Se3 晶须的亚表面层。