Abstract Mixed electrolyte of oxalic acid and NaNO3, which can be used to fabricate an InGaN/GaN multiple quantum well (MQW) structure with an embedded porous-GaN distributed Bragg reflector (DBR), is more effective than oxalic acid or NaNO3 solutions. Compared to the as-grown GaN-based film, the etched sample was significantly enhanced and narrowed in the intensity and line-width of photoluminescence (PL), respectively, which are contributable to strain relaxation of MQW layer and light-interference effect induced by forming the embedded porous-DBR mirror. Due to the presence of nanopores in the MQW layer, the mass-transport cause the crystalline quality of the MQW layer to deteriorate significantly during the regrowth of GaN-based light emitting diode (LED). Therefore, the performance enhancement of the PL in the LED with the embedded DBR structure should be contributable to improved external and internal quantum efficiencies.

中文翻译：

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通过多孔 GaN 反射镜提高 InGaN/GaN 多量子阱层的发光效率

摘要 草酸和 NaNO3 混合电解质可用于制造具有嵌入式多孔 GaN 分布式布拉格反射器 (DBR) 的 InGaN/GaN 多量子阱 (MQW) 结构，比草酸或 NaNO3 溶液更有效。与生长的 GaN 基薄膜相比，蚀刻样品的光致发光 (PL) 强度和线宽分别显着增强和变窄，这有助于 MQW 层的应变弛豫和由形成嵌入式多孔 DBR 镜。由于 MQW 层中存在纳米孔，质量传输导致 MQW 层的晶体质量在 GaN 基发光二极管 (LED) 的再生长过程中显着恶化。所以，