A novel structural piezoresistive pressure sensor with four-grooved diaphragm combined with rood beam has been proposed for low pressure measurements of less than 1 psi. The proposed sensor chip is fabricated on a SOI wafer by traditional MEMS micromachining and anodic bonding technology. By localizing more strain energy in the stress concentration region and increasing the constraint of the partial pedestal, the sensor achieved a high sensitivity and linearity of 30.9 mV/V/psi and 0.25% FSS respectively at room temperature, and thereby the contradiction between sensitivity and linearity is alleviated. Besides, a sensitivity of 21.2 mV/V/psi and a linearity of 0.5% FSS were obtained at 150 °C, which illustrates that the proposed sensor has a stable high temperature output characteristic. Additionally, the mechanisms about strain energy transmission and partially stiffened diaphragm are also discussed.

已经提出了一种新颖的结构压阻式压力传感器，该传感器具有四槽膜片与顶梁结合，可用于小于1 psi的低压测量。所提出的传感器芯片是通过传统的MEMS微加工和阳极键合技术在SOI晶圆上制造的。通过将更多的应变能集中在应力集中区域并增加对部分基座的约束，该传感器在室温下分别获得了30.9 mV / V / psi和0.25％FSS的高灵敏度和线性，从而在灵敏度和灵敏度之间存在矛盾。线性得到缓解。此外，在150°C下获得21.2 mV / V / psi的灵敏度和0.5％FSS的线性，这说明所提出的传感器具有稳定的高温输出特性。另外，