Samples of boron (B) doped g-C3N4 (BCN) and boron nitride (BN) composite (BN/BCN) were synthesized by a simple in situ technique by varying BN content in the range of 1–10% mass fraction and boron contents are crucial for improving the activity of the composites. The composites were characterized by PXRD and FTIR in order to confirm their successful formation. Prompt Gamma Neutron Activation Analysis (PGNAA) using thermal neutron beam from Dhruva reactor was used for non-destructive determination of total boron concentration by measuring 478 keV prompt gamma-ray from 10B (n, αγ)7*Li reaction. The obtained boron concentrations are in the range of 2.3–6.2% mass fraction.

中文翻译：

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利用 Dhruva 反应堆中的热中子束通过瞬发伽马射线中子活化分析定量 BN/BCN 复合材料中的硼含量

硼 (B) 掺杂的 g-C3N4 (BCN) 和氮化硼 (BN) 复合材料 (BN/BCN) 的样品通过简单的原位技术通过在 1-10% 的质量分数和硼含量范围内改变 BN 含量来合成对提高复合材料的活性至关重要。通过 PXRD 和 FTIR 对复合材料进行表征，以确认其成功形成。使用来自 Dhruva 反应堆的热中子束的瞬发伽马中子活化分析 (PGNAA) 通过测量来自 10B (n, αγ)7*Li 反应的 478 keV 瞬发伽马射线来无损测定总硼浓度。获得的硼浓度在 2.3-6.2% 的质量分数范围内。