Deformable semiconductors Semiconductors are usually brittle and do not deform easily. Wei et al. found that bulk single crystals of indium selenide instead have excellent flexibility (see the Perspective by Han). The deformability comes from the compliant intralayer bonding between indium and selenium. The authors used these observations along with a previously discovered silver sulfide to determine a deformability factor for materials that may help find other deformable semiconductors. Science, this issue p. 542; see also p. 509 Indium selenide is an easily deformed semiconductor that helps define a deformability factor for materials development. Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

中文翻译：

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块状单晶范德华半导体 InSe 中的异常可塑性

可变形半导体半导体通常较脆，不易变形。魏等人。发现硒化铟的块状单晶具有出色的柔韧性（参见 Han 的观点）。变形能力来自铟和硒之间的顺应层内键合。作者使用这些观察结果以及先前发现的硫化银来确定材料的变形系数，这可能有助于找到其他可变形半导体。科学，这个问题 p。542; 另见第 509 硒化铟是一种容易变形的半导体，有助于定义材料开发的变形系数。无机半导体对于许多关键应用至关重要，但几乎普遍易碎。在这里，我们报告了硒化铟 (InSe) 的超塑性变形能力。块状单晶 InSe 可以压缩几个数量级，并在室温下变形为莫比乌斯带或简单的折纸。这种二维范德华无机半导体的特殊可塑性归因于层间滑动和跨层位错滑移，这是由跨范德华间隙和软层内 In-Se 的长程 In-Se 库仑相互作用介导的粘合。我们提出了一种组合变形能力指标 (Ξ) 来预筛选用于下一代可变形或柔性电子产品的候选体半导体。这种二维范德华无机半导体的特殊可塑性归因于层间滑动和跨层位错滑移，这是由跨范德华间隙和软层内 In-Se 的长程 In-Se 库仑相互作用介导的粘合。我们提出了一种组合变形能力指标 (Ξ) 来预筛选用于下一代可变形或柔性电子产品的候选体半导体。这种二维范德华无机半导体的特殊可塑性归因于层间滑动和跨层位错滑移，这是由跨范德华间隙和软层内 In-Se 的长程 In-Se 库仑相互作用介导的粘合。我们提出了一种组合变形能力指标 (Ξ) 来预筛选用于下一代可变形或柔性电子产品的候选体半导体。