Soft error protection is a paramount requirement for memories exposed to radiation environment. To satisfy the demand, a radiation-hardened new-quatro 10T memory cell is proposed in this brief, which is immune to single-node upset and also has high resilience to multinode upset while features read-disturbance-free benefiting from its internal quad-node interlocked feedback mechanism. Simulation results show that it provides ample radiation robustness to single event and gives $1.75\times $ improvements in multinode upset tolerance when compared with the previous 12T dual-interlocked storage cell (DICE-12T) bitcell, signifying the higher fault tolerance capability. In addition, the proposed design also achieves $6.48\times $ enhancement in read noise margin when compared with the DICE-12T bitcell while compromising only $2.1\times $ larger area than a reference 6T cell based on a 65-nm logic design rule, exhibiting the superiority in read stability.

中文翻译：

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用于航空航天应用的抗辐射、无读取干扰的新型 Quatro-10T 存储单元

软错误保护是暴露于辐射环境的存储器的首要要求。为了满足需求，本文提出了一种抗辐射的新型quatro 10T存储单元，它不受单节点扰乱影响，对多节点扰乱也具有高弹性，同时受益于其内部四核结构的无读干扰特性。节点互锁反馈机制。仿真结果表明，它对单个事件提供了足够的辐射鲁棒性，并给出了 $1.75\times $ 在多节点心烦公差改进当与前一12T双互锁存储单元（DICE-12T）相比位单元，标志着更高容错能力。此外，所提出的设计还实现了 $6.48\times $ 与 DICE-12T 位单元相比，读取噪声容限有所增强，同时仅妥协 $2.1\times $ 比基于65纳米逻辑设计规则的参考6T单元更大的面积，在读取稳定性方面表现出优势。