Stacking faults are easily formed in SiC crystals, and this is also the case for SiC nanowires. The stacking faults exercise influences on SiC's properties, therefore it is important to understand their formation mechanism and to control their formation for applications of SiC and its nanowires. In this study, we propose a method for investigating stacking faults' formation mechanism in nanowires, and provide its proof of concept. Stacking sequences in a pair of SiC nanowires that were grown from the same metal catalyst nanoparticle were quantified as a pair of binary sequences, and Levenshtein distances between partial sequences extracted from the two sequences were measured to detect similarity between them, and the result was compered with that obtained using a surrogate data of one sequence. The similarity analysis using Levenshtein distances works as a probe for investigating possible influences of some phenomena in the catalyst nanoparticle on the formation of stacking faults. The analysis did not detect a correlation between the two sequences. Although a possibility that the formation of stacking faults in the nanowires were owing to some phenomena in the catalyst nanoparticle cannot be denied, the extrinsic cause in the catalyst nanoparticle was not detected through our analysis in this case.

中文翻译：

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使用 Levenshtein 距离对由相同催化剂纳米颗粒生长的 SiC 纳米线对中的堆叠序列进行相似性分析

碳化硅晶体中容易形成堆垛层错，碳化硅纳米线也是如此。堆垛层错会影响 SiC 的性能，因此了解其形成机制并控制其形成对于 SiC 及其纳米线的应用非常重要。在这项研究中，我们提出了一种研究纳米线中堆垛层错形成机制的方法，并提供了其概念证明。将同一金属催化剂纳米颗粒生长的一对 SiC 纳米线中的堆积序列量化为一对二元序列，并测量从这两个序列中提取的部分序列之间的 Levenshtein 距离以检测它们之间的相似性，并将结果进行比较使用一个序列的替代数据获得的结果。使用 Levenshtein 距离的相似性分析可作为一种探针，用于研究催化剂纳米颗粒中的某些现象对层错形成的可能影响。该分析未检测到两个序列之间的相关性。虽然不能否认纳米线中堆垛层错的形成是由于催化剂纳米颗粒中的某些现象造成的，但在这种情况下，我们的分析并未检测到催化剂纳米颗粒中的外在原因。