Abstract Herein, we report the first observation of Negative differential resistance (NDR) associated with resistance switching in Vanadyl-phthalocyanine (VOPc) based devices with the configuration: ITO/F4TCNQ/VOPc/MoO3/Al. It was observed that the devices were initially at low resistance ON state (LS) and were switched to high resistance OFF state (HS) at sufficient applied bias. The NDR behaviour was observed during the initial sweep for each device (often referred to as the writing process). The ON/OFF state transition was attributed to the formation and neutralization of interface dipoles at the ITO/VOPc interface. Finally, the observed non-volatile RS switching behaviour was demonstrated employing impedance spectroscopic studies. This study opens up the potential applications of VOPc Resistance Switching devices in security and data protection applications.

中文翻译：

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氧钒酞菁薄膜电阻转换的观察

摘要在此，我们报告了与配置为 ITO/F4TCNQ/VOPc/MoO3/Al 的基于氧钒基酞菁 (VOPc) 的器件中的电阻切换相关的负微分电阻 (NDR) 的首次观察结果。据观察，器件最初处于低电阻导通状态 (LS)，并在施加足够的偏压时切换到高电阻关断状态 (HS)。在每个设备的初始扫描期间（通常称为写入过程）观察到 NDR 行为。ON/OFF 状态转换归因于 ITO/VOPc 界面处界面偶极子的形成和中和。最后，使用阻抗光谱研究证明了观察到的非易失性 RS 切换行为。