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Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator
Science Bulletin ( IF 18.9 ) Pub Date : 2020-07-31 , DOI: 10.1016/j.scib.2020.07.032
Lixuan Xu 1 , Yuanhao Mao 2 , Hongyuan Wang 3 , Jiaheng Li 4 , Yujie Chen 4 , Yunyouyou Xia 3 , Yiwei Li 5 , Ding Pei 5 , Jing Zhang 6 , Huijun Zheng 6 , Kui Huang 6 , Chaofan Zhang 2 , Shengtao Cui 6 , Aiji Liang 7 , Wei Xia 8 , Hao Su 6 , Sungwon Jung 9 , Cephise Cacho 9 , Meixiao Wang 10 , Gang Li 10 , Yong Xu 11 , Yanfeng Guo 6 , Lexian Yang 12 , Zhongkai Liu 10 , Yulin Chen 13 , Mianheng Jiang 14
Affiliation  

Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition. Together with the results of its sister compound MnBi2Te4, we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.



中文翻译:

MnBi2Te4/Bi2Te3 超晶格反铁磁拓扑绝缘体中带隙减小的持久表面态

磁性拓扑量子材料 (TQM) 为迷人的拓扑磁电效应的出现提供了肥沃的土壤。最近,本征反铁磁 (AFM) 拓扑绝缘体 MnBi 2 Te 4的发现可以实现量化的反常霍尔效应和轴子绝缘体相,引发了对这一系列 TQM 化合物的深入研究。在这里,我们研究了 AFM 化合物 MnBi 4 Te 7,其中 Bi 2 Te 3和 MnBi 2 Te 4层交替形成超晶格。使用空间和角度分辨光电子能谱,我们从 Bi 2 Te 3和 MnBi 2 Te 4终端中识别出普遍存在的(虽然终端依赖)拓扑电子结构。出乎意料的是,虽然体带显示出与 AFM 跃迁相关的强烈温度依赖性,但间隙逐渐减小的拓扑表面状态在整个 AFM 跃迁中显示出可忽略的温度依赖性。连同其姐妹化合物 MnBi 2 Te 4的结果,我们说明了电子结构的重要方面以及该系列磁性 TQM 中磁性排序的影响。

更新日期:2020-07-31
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