In this study, a bilayer HfO₂/ZrO₂ thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO₂/ZrO₂ structured device > 10³ DC switching cycles at RT, and > 10 ON/OFF ratio. The RS uniformity and mechanism were evaluated by Gaussian data fitting and distributions of oxygen vacancies (V_Os) in the HfO₂ and ZrO₂ layers through X-ray photo electron spectroscopy (XPS) analysis, respectively. Because of higher thermal conductivity ($2.7{\mathrm{W}\mathrm{m}}^{-1}{\mathrm{K}}^{-1}$) and lower Gibbs free energy $(\mathrm{\Delta }{G}^o=-1100\mathrm{k}\mathrm{J}/\mathrm{m}\mathrm{o}\mathrm{l})$ of ZrO₂ layer as compared to those of HfO₂ layer $(1.1\mathrm{W}{\mathrm{m}}^{-1}{\mathrm{K}}^{-1},\mathrm{\Delta }{G}^o=-1010.8\mathrm{k}\mathrm{J}/\mathrm{m}\mathrm{o}\mathrm{l})$, an easier reduction and oxidation of filaments took place by exchanging oxygen ions with each other (ZrO₂/HfO₂). A V_Os-based filamentary model has been proposed to explain RS mechanism. Furthermore, a current transport mechanism is noted be based on Schottky emission in the high field region of the high resistance states (HRS).

在这项研究中，通过在室温（RT）下通过射频溅射沉积双层HfO ₂ / ZrO ₂薄膜结构，以研究电阻开关（RS）的特性，机理及其可重复性。双层HfO ₂ / ZrO ₂结构的器件在RT时> 10 ³ DC开关周期，并且> 10 ON / OFF比率。的RS的均匀性和机制，通过高斯数据拟合和氧空位分布（V评价_ø在的HfO S）₂和ZrO ₂层通过X射线光电子能谱（XPS）分析分别。由于较高的热导率（$2.7{\mathrm{w\; ^}\mathrm{米}}^{--\mathrm{1个}}{\mathrm{ķ}}^{--\mathrm{1个}}$）并降低吉布斯自由能 $（\mathrm{\Delta }{G}^{Ø}=--1100\mathrm{ķ}\mathrm{Ĵ}/\mathrm{米}\mathrm{Ø}\mathrm{升}）$ZrO ₂层与HfO ₂层相比$（1.1\mathrm{w\; ^}{\mathrm{米}}^{--\mathrm{1个}}{\mathrm{ķ}}^{--\mathrm{1个}}，\mathrm{\Delta }{G}^{Ø}=--1010.8\mathrm{ķ}\mathrm{Ĵ}/\mathrm{米}\mathrm{Ø}\mathrm{升}）$通过彼此交换氧离子（ZrO ₂ / HfO ₂），更容易还原和氧化长丝。已经提出了基于AV _O s的丝状模型来解释RS机理。此外，注意到基于高电阻态（HRS）的高场区域中的肖特基发射的电流传输机制。