The magnetic interaction on this type of material is promising to rise some exotic phenomena. Currently, the magnetic doping with x = 0.075 on the electronic structure of Cr_x:Bi_2-xTe₃ is investigated. We observed that the topological phase was kept for that amount of doping concentration. We probed the signature of the 3d states via element-specific probing of the valence band by ARPES. The electronic bands for doped TI showed broadening due to the substitutional disorder and shifting to higher energies. We assumed the existence of the small effects of contributions of p-d exchange as well as ferromagnetic super exchange on our system, which keep gapless surface state. Decapping 100 nm of Te cap needs 165 min for sputtering process and 35 min of annealing at 195 °C. The work shows a path to change the topological properties of TI, which is of significance for practical application based on TI and future primal research.

这种材料上的磁性相互作用有望引起一些奇特的现象。目前，研究了Cr _x：Bi _2-x Te ₃的电子结构上的x = 0.075的磁性掺杂。我们观察到拓扑阶段保持了一定的掺杂浓度。我们调查了3D状态的签名通过ARPES对价带的元素特定探测。掺杂的TI的电子带由于取代无序而变宽并转移到更高的能量。我们假设存在pd交换贡献以及铁磁超级交换对系统的微小影响，这些影响会保持无间隙的表面状态。降低100 nm的Te cap需要165分钟的溅射过程和195°C的退火时间35分钟。这项工作显示了改变TI拓扑特性的途径，这对于基于TI和未来的初步研究的实际应用具有重要意义。