This paper presents the results of studying the shielding effect of a vertical moving shutter micromachined electric field mill. In this design, a set of interdigital sensing electrodes are located in the same plane as the moving shutter, with the shutter's vertical motion enabling modulation of the sensed electric field. The effects of various geometrical parameters of the shutter, including the spacing between the fingers and their width, were simulated to study the collected charge as a function of shutter displacement. For the cases with shutter finger spacings 1.5-2 times finger-widths, when the shutter lifted up to a height equal to the comb finger-width, the electrode signal dropped by approximately 22-26%. When the shutter lowered for a height equal to finger-with, the charge increased by approximately 24%. To verify the results of the simulations, one shutter design was selected and fabricated. Thermal actuators were employed to move the shutter vertically, in order to study the shutter shielding effect as a function of displacement. The sensor's mechanical performance test demonstrated 25 μm of displacement when heated to 100 °C. The electric field sensing functionality of the sensor was also tested under an electric field of 9.4 kV/m. The vertical motion of the shutter successfully demonstrated its ability to vary the field on the sensing electrodes. An output voltage of 7 ± 0.5 µV was measured per oscillation of the 1.3 × 2 mm shutter for a 25 µm movement. The sensor demonstrated a sensitivity of 0.74 mV/kV/m.

中文翻译：

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垂直移动百叶窗微机械场磨对直流电场测量的屏蔽效果研究

本文介绍了研究垂直移动百叶窗微机械电场磨机屏蔽效果的结果。在该设计中，一组叉指感应电极与移动的快门位于同一平面，快门的垂直运动能够调制感应电场。模拟百叶窗各种几何参数的影响，包括手指之间的间距及其宽度，以研究作为百叶窗位移函数的收集电荷。对于快门指间距为 1.5-2 倍指宽的情况，当快门提升到与梳指宽度相等的高度时，电极信号下降约 22-26%。当百叶窗下降等于手指的高度时，电荷增加了大约 24%。为了验证模拟结果，选择并制作了一种百叶窗设计。热致动器被用来垂直移动百叶窗，以研究作为位移函数的百叶窗屏蔽效果。当加热到 100 °C 时，传感器的机械性能测试表明位移为 25 μm。该传感器的电场传感功能也在 9.4 kV/m 的电场下进行了测试。快门的垂直运动成功地证明了它能够改变感应电极上的场。1.3 × 2 mm 快门每次振荡 25 µm 时测量到的输出电压为 7 ± 0.5 µV。该传感器的灵敏度为 0.74 mV/kV/m。为了研究作为位移函数的快门屏蔽效应。当加热到 100 °C 时，传感器的机械性能测试表明位移为 25 μm。该传感器的电场传感功能也在 9.4 kV/m 的电场下进行了测试。快门的垂直运动成功地证明了它能够改变感应电极上的场。1.3 × 2 mm 快门每次振荡 25 µm 时测量到的输出电压为 7 ± 0.5 µV。该传感器的灵敏度为 0.74 mV/kV/m。为了研究作为位移函数的快门屏蔽效应。当加热到 100 °C 时，传感器的机械性能测试表明位移为 25 μm。该传感器的电场传感功能也在 9.4 kV/m 的电场下进行了测试。快门的垂直运动成功地证明了它能够改变感应电极上的场。1.3 × 2 mm 快门每次振荡 25 µm 时测量到的输出电压为 7 ± 0.5 µV。该传感器的灵敏度为 0.74 mV/kV/m。快门的垂直运动成功地证明了它能够改变感应电极上的场。1.3 × 2 mm 快门每次振荡 25 µm 时测量到的输出电压为 7 ± 0.5 µV。该传感器的灵敏度为 0.74 mV/kV/m。快门的垂直运动成功地证明了它能够改变感应电极上的场。1.3 × 2 mm 快门每次振荡 25 µm 时测量到的输出电压为 7 ± 0.5 µV。该传感器的灵敏度为 0.74 mV/kV/m。