Transition metal doping has been used as a common approach for tuning the bandgap energy of zinc oxide (ZnO) based materials. In this work, manganese-doped ZnO (ZnMnO) thin films were grown using the atomic layer deposition (ALD) and used to study the effect of manganese incorporation in ZnO films. The effect of digital alloying on reducing the absorption edge of the ZnMnO thin films is studied by changing the ZnO to MnO cycle ratio during each ALD super-cycle. Room-temperature optical spectroscopic characterization showed a significant reduction in bandgap energy from 3.30 eV for pure ZnO to around 2.25 eV for the ZnMnO thin films with the ZnO:MnO cycle ratio of 5:3. This is likely due to the effect of band bending, which can be related to the formation of Mn-related impurity energy levels in the band structure of the ZnMnO. A notable change in the deduced optical bandgap energy was observed by further increasing the growth sequence of ZnO and MnO layers in each super-cycle. Th...

中文翻译：

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原子层沉积生长数字化ZnMnO薄膜的吸收边减少

过渡金属掺杂已被用作调整氧化锌（ZnO）基材料的带隙能量的常用方法。在这项工作中，使用原子层沉积（ALD）生长了掺锰的ZnO（ZnMnO）薄膜，并用于研究锰掺入ZnO薄膜中的作用。通过在每个ALD超循环中改变ZnO与MnO的循环比，研究了数字合金化对减少ZnMnO薄膜吸收边缘的影响。室温光谱分析表明，带隙能量从纯ZnO的3.30 eV显着降低到ZnO：MnO循环比为5：3的ZnMnO薄膜的约2.25 eV。这可能是由于能带弯曲的影响，它与ZnMnO的能带结构中Mn相关杂质能级的形成有关。通过进一步增加每个超循环中ZnO和MnO层的生长顺序，可以观察到推导的光学带隙能量的显着变化。那个...