Recently, we demonstrated the positive effects of heat‐light soaking (HLS) and subsequent heat‐soaking (HS) on cesium fluoride (CsF) treated Cu(In₁‐_x,Ga_x)Se₂ (CIGS) solar cells. However, the role of defects formation and its influence on the electronic properties have not been analyzed. With this motivation, here, we analyzed the electronic properties of CsF‐free and CsF‐treated CIGS solar cells before and after HLS and subsequent HS treatments using temperature‐dependent current–voltage (J–V–T), admittance and low‐temperature capacitance–voltage (C–V) measurements. We noticed that CsF‐treated CIGS solar cells form a minority carrier trap level after HLS. The subsequent HS treatment was found to be beneficial to compensate this defect level. The admittance measurement showed a shift of the shallow energy position to a higher value after HLS and subsequent HS treatments, irrespective of Cs incorporation. This is expected to be due to the formation of a secondary diode toward the CIGS/molybdenum contact. The positive and negative effects of HLS and subsequent HS treatments on CsF‐treated CIGS solar cell are discussed using low‐temperature C–V measurements. By optimizing the HLS and HS processes, CsF‐treated CIGS solar cells yielded total efficiencies of over 20%.

中文翻译：

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铯处理的Cu（In1- x，Gax）Se2太阳能电池在热光浸泡和随后的热浸泡处理前后的温度相关电流-电压和导纳光谱分析

最近，我们展示了热浸（HLS）和随后的热浸（HS）对氟化铯（CsF）处理的Cu（In ₁ - _x， Ga _x）Se ₂（CIGS）太阳能电池的积极作用。但是，尚未分析缺陷形成的作用及其对电子性能的影响。出于这种动机，在这里，我们使用温度相关的电流-电压（J–V–T），导纳和低温来分析HLS和后续HS处理前后无CsF和经CsF处理的CIGS太阳能电池的电子性能电容电压（C–V） 测量。我们注意到，经过CsF处理的CIGS太阳能电池在HLS之后形成少数载流子陷阱能级。发现随后的HS治疗有益于补偿该缺陷水平。导纳测量显示，在进行HLS和随后的HS处理后，不管Cs的掺入情况如何，浅能级位置都会移至更高的值。预计这是由于朝CIGS /钼触点形成了一个次级二极管。使用低温C–V测量讨论了HLS和后续HS处理对CsF处理的CIGS太阳能电池的正面和负面影响。通过优化HLS和HS工艺，经CsF处理的CIGS太阳能电池的总效率超过20％。