Abstract This study investigates the impact of the arsenic and phosphorus concentration on the oxygen content in heavily doped silicon crystals. The resistivity and the oxygen measurements were made on 200 mm crystals grown with the Czochralski method. The oxygen concentration, measured by Gas Fusion Analysis, decreases with the increase of dopant concentration. Two mechanisms related to the effect of the arsenic and phosphorus concentration on the oxygen contents are discussed: one is the possible inhibition of the oxygen segregation inside the silicon crystal due to the lattice deformation and the other is the oxygen evaporation enhancement from the melt through dopant-oxides formation.

中文翻译：

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砷和磷浓度对重掺杂单晶硅中氧含量的影响 rev.1 蓝色修改

摘要 本研究调查了砷和磷浓度对重掺杂硅晶体中氧含量的影响。电阻率和氧测量是在用直拉法生长的 200 毫米晶体上进行的。Gas Fusion Analysis测得的氧浓度随着掺杂剂浓度的增加而降低。讨论了与砷和磷浓度对氧含量影响相关的两种机制：一种是可能抑制由于晶格变形导致的硅晶体内部的氧偏析，另一种是通过掺杂剂增强熔体中的氧蒸发-氧化物形成。